人工晶体学报2008，Vol.37Issue(4)：997-1002,6.
B掺杂对平面结构MOCVD-ZnO薄膜性能的影响
Effect of Boron-doping on Plane Zinc Oxide Thin Films Grown by Metal Organic Chemical Vapor Deposition
摘要
Abstract
Transparent conductive boron-doped zinc oxide (ZnO:B) films with plane surface have been deposited on glass substrates by metal organic chemical vapor deposition, using diethylzinc (DEZn) and water as reactant the gases and diborane (B2H6) as the n-type dopant gas. The structural, electrical and optical properties of films grown at 403 K were investigated as a function of B2H6 flow rates (0 ～ 10 sccm). X-ray diffraction spectra (XRD) and scanning electron microscopy (SEM) images indicated these films oriented in the [002] crystallographic direction are with regular and uniformly smooth surfaces and the grain size of the films are smaller ( ～ 15 nm at 10 sccm) that of the undoped sample. Atomic force microscopy (AFM) also revealed that the ZnO:B film (at 10 sccm) was nanostructured and with a surface roughness of ～ 5 nm. The lowest resistivity for the ZnO : B films was about 5.7 × 10-3 Ω · cm. These as-grown ZnO films at different B2H6 flow rates exhibited a high transmittance ( ～ 82% -97% ) in the range of 400-900 nm with a thickness of ～ 1150 nm. The optical absorption edge was shown to shift to higher photon energy with increasing electron concentration, following the Burnstein-Moss law.关键词
MOCVD/ZnO薄膜/B掺杂/太阳电池Key words
MOCVD/ZnO films/boron-doping/solar cells分类
数理科学引用本文复制引用
陈新亮,薛俊明,张德坤,孙建,赵颖,耿新华..B掺杂对平面结构MOCVD-ZnO薄膜性能的影响[J].人工晶体学报,2008,37(4):997-1002,6.基金项目
This work supported by the National Basic Research Program of China (No. 2006CB202602, 2006CB202603 ) （No. 2006CB202602, 2006CB202603 ）
Tianjin AssistantFoundation for the National Basic Research Program of China (07QTPTJC29500) （07QTPTJC29500）
Doctor Start-up Foundation of NankaiUniversity ( No. J02048 （）
