A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrateOA北大核心CSCDCSTPCD

作者：Wang Dongfang;Chen Xiaojuan;Liu Xinyu

作者单位：Institute of Microelectronics,Chinese Academy of Sciences.Beijing 100029,ChinaGraduated University of the Chinese Academy of Sciences,Beijing 100049,ChinaInstitute of Microelectronics,Chinese Academy of Sciences.Beijing 100029,China

中文关键词：AlGaN/GaN HEMTKu bandpower

英文关键词：AlGaN/GaN HEMTKu bandpower

刊名：《半导体学报》 2010 (2)

相关项目：GaN基毫米波功率器件与材料基础与关键技术研究

页码/页数：5-6,2

基金：Project suppoaed by the National Natural Science Foundation of China(No.60890191).

DOI：10.1088/1674-4926/31/2/024001