半导体学报2010，Vol.31Issue(8)：48-52,5.DOI:10.1088/1674-4926/31/8/084002
Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth
Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth
Li Zehong 1Ren Min 1Zhang Bo 1Ma Jun 1Hu Tao 1Zhang Shuai 2Wang Fei 2Chen Jian2
作者信息
- 1. State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology,Chengdu 610054,China
- 2. Shanghai Hua Hong NEC Electronics Company Limited,Shanghai 2012064,China
- 折叠
摘要
关键词
superjunction/deep trench etching/epitaxial growth/power MOSFETKey words
superjunction/deep trench etching/epitaxial growth/power MOSFET引用本文复制引用
Li Zehong,Ren Min,Zhang Bo,Ma Jun,Hu Tao,Zhang Shuai,Wang Fei,Chen Jian..Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth[J].半导体学报,2010,31(8):48-52,5.
