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Diagram representations of charge pumping processes in CMOS transistors

Huang Xinyun Jiao Guangfan Shen Chen Cao Wei Huang Daming Li Mingfu

半导体学报2010，Vol.31Issue(8)：53-59,7.

半导体学报2010，Vol.31Issue(8)：53-59,7.DOI:10.1088/1674-4926/31/8/084003

Diagram representations of charge pumping processes in CMOS transistors

Huang Xinyun ¹Jiao Guangfan ¹Shen Chen ²Cao Wei ¹Huang Daming ¹Li Mingfu¹

作者信息

1. State Key Laboratory of ASIC & System,Department of Microelectronics,Fudan University,Shanghai 201203,China
2. SNDL,ECE Department,National University of Singapore,Singapore 117576,Singapore
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摘要

关键词

charge pumping/interface-trap generation/bias temperature instability/modified CP/oxide charge

Key words

charge pumping/interface-trap generation/bias temperature instability/modified CP/oxide charge

引用本文复制引用

Huang Xinyun,Jiao Guangfan,Shen Chen,Cao Wei,Huang Daming,Li Mingfu..Diagram representations of charge pumping processes in CMOS transistors[J].半导体学报,2010,31(8):53-59,7.

基金项目

Project supported by the Micro/Nano-Electronics Science and Technology Innovation Platform of Fudan University,National Natural Science Foundation of China (No.60936005),and the National VLSI Project (No.2009ZX02035-003). （No.60936005）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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