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Effect of power variation on microstructure and surface morphology of HgCdTe films deposited by RF magnetron sputtering

Wang Guanghua Kong Jincheng Li Xiongjun Qiu Fen Li Cong Yang Lili Kong Lingde Ji Rongbin

半导体学报2010，Vol.31Issue(5)：35-39,5.

半导体学报2010，Vol.31Issue(5)：35-39,5.DOI:10.1088/1674-4926/31/5/053004

Effect of power variation on microstructure and surface morphology of HgCdTe films deposited by RF magnetron sputtering

Wang Guanghua ¹Kong Jincheng ¹Li Xiongjun ¹Qiu Fen ²Li Cong ²Yang Lili ¹Kong Lingde ¹Ji Rongbin¹

作者信息

1. Kunming Institute of Physics,Kunming 650223,China
2. Department of Physics Science and Technology,Kunming 650031,China
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摘要

关键词

HgCdTe films/semiconductors/growth rate/microstructure/surface morphology

Key words

HgCdTe films/semiconductors/growth rate/microstructure/surface morphology

引用本文复制引用

Wang Guanghua,Kong Jincheng,Li Xiongjun,Qiu Fen,Li Cong,Yang Lili,Kong Lingde,Ji Rongbin..Effect of power variation on microstructure and surface morphology of HgCdTe films deposited by RF magnetron sputtering[J].半导体学报,2010,31(5):35-39,5.

基金项目

Project supported by the National Natural Science Foundation of China (No.60576069). （No.60576069）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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