电子科技学刊2010，Vol.8Issue(2)：144-148,5.DOI:10.3969/j.issn.1674-862X.2010.02.010
Analytical Modeling of Quantum Mechanical Tunneling in Germanium Nano-MOSFETS
Analytical Modeling of Quantum Mechanical Tunneling in Germanium Nano-MOSFETS
Amit Chaudhry 1J.N.Roy2
作者信息
- 1. University Institute of Engineering and Technology, Panjab University,Chandigarh,India
- 2. Solar Semiconductor Private Limited,Hyderabad,India.
- 折叠
摘要
关键词
Dielectric/effective oxide thickness/energy quantization/quantum mechanical effects/TunnelingKey words
Dielectric/effective oxide thickness/energy quantization/quantum mechanical effects/Tunneling引用本文复制引用
Amit Chaudhry,J.N.Roy..Analytical Modeling of Quantum Mechanical Tunneling in Germanium Nano-MOSFETS[J].电子科技学刊,2010,8(2):144-148,5.
