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A flexible logic circuit based on a MOS-NDR transistor in standard CMOS technology

Wang Wei Huang Beiju Dong Zan Guo Weilian Chen Hongda

半导体学报2010，Vol.31Issue(5)：102-105,4.

半导体学报2010，Vol.31Issue(5)：102-105,4.DOI:10.1088/1674-4926/30/5/055007

A flexible logic circuit based on a MOS-NDR transistor in standard CMOS technology

Wang Wei ¹Huang Beiju ¹Dong Zan ¹Guo Weilian ²Chen Hongda¹

作者信息

1. State Key Laboratory for Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
2. School of Information and Communication,Tianjin Polytechnic University,Tianjin 300160,China
折叠

摘要

关键词

MOS-NDR/CMOS/resonant tunneling diode/monostable-bistable transition logic element/flexiblelogic gate

Key words

MOS-NDR/CMOS/resonant tunneling diode/monostable-bistable transition logic element/flexiblelogic gate

引用本文复制引用

Wang Wei,Huang Beiju,Dong Zan,Guo Weilian,Chen Hongda..A flexible logic circuit based on a MOS-NDR transistor in standard CMOS technology[J].半导体学报,2010,31(5):102-105,4.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.60536030,60502005) and the National High Technology Research and Development Program of China (Nos.2007AA01Z2A5,2006AA01Z239,2007AA03Z454). （Nos.60536030,60502005）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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