半导体学报2010，Vol.31Issue(5)：139-144,6.DOI:10.1088/1674-4926/31/5/056001
SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs
SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs
Shang Haiping 1Xu Qiuxia1
作者信息
- 1. Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
- 折叠
摘要
关键词
NiSi/n-Si SJD/effective Schottky barrier height/dopant segregation processKey words
NiSi/n-Si SJD/effective Schottky barrier height/dopant segregation process引用本文复制引用
Shang Haiping,Xu Qiuxia..SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs[J].半导体学报,2010,31(5):139-144,6.
