半导体学报2010，Vol.31Issue(7)：16-21,6.DOI:10.1088/1674-4926/31/7/074001
Barrier height and ideality factor dependency on identically produced small Au/p-Si Schottky barrier diodes
Barrier height and ideality factor dependency on identically produced small Au/p-Si Schottky barrier diodes
M.A.Yeganeh 1S.H.Rahmatollahpur2
作者信息
- 1. Faculty of Physics,Baku State University,Academic Zahid X(а)lilov kü(c)(а)si -23,AZ 1148,Baku,Azerbaijan
- 2. Departments of Physics,Sharif University of Technology,11365-9567,Tehran,Iran
- 折叠
摘要
关键词
Schottky barrier diodes/conducting probe-atomic force microscope/barrier height and ideality factorKey words
Schottky barrier diodes/conducting probe-atomic force microscope/barrier height and ideality factor引用本文复制引用
M.A.Yeganeh,S.H.Rahmatollahpur..Barrier height and ideality factor dependency on identically produced small Au/p-Si Schottky barrier diodes [J].半导体学报,2010,31(7):16-21,6.
