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An 8 GHz high power AlGaN/GaN HEMT VCO

Chen Huifang Wang Xiantai Chen Xiaojuan Luo Weijun Liu Xinyu

半导体学报2010，Vol.31Issue(7)：61-64,4.

半导体学报2010，Vol.31Issue(7)：61-64,4.DOI:10.1088/1674-4926/31/7/074012

An 8 GHz high power AlGaN/GaN HEMT VCO

Chen Huifang ¹Wang Xiantai ¹Chen Xiaojuan ¹Luo Weijun ¹Liu Xinyu¹

作者信息

1. Key Laboratory of Microelectronics Device & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
折叠

摘要

关键词

AlGaN/GaN HEMT/negative resistance VCO/high power/phase noise/flicker noise

Key words

AlGaN/GaN HEMT/negative resistance VCO/high power/phase noise/flicker noise

引用本文复制引用

Chen Huifang,Wang Xiantai,Chen Xiaojuan,Luo Weijun,Liu Xinyu..An 8 GHz high power AlGaN/GaN HEMT VCO[J].半导体学报,2010,31(7):61-64,4.

基金项目

Project supported by the State Key Development Program for Basic Research of China (No.2010CB327500) and the National Natural Science Foundation of China (No.60890191). （No.2010CB327500）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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