液晶与显示2010，Vol.25Issue(4)：523-526,4.
多晶硅薄膜晶体管亚阈值区准二维模型
Quasi-Two-Dimensional Subthreshold Current Model for Polysilicon Thin Film Transistors
摘要
Abstract
Based on the diffusion and thermal emission processes,an analytical subthreshold current model for polysilicon thin film transistors(poly-Si TFTs)is developed by a quasitwo-dimensional solution.An analytical expression of the subthreshold swing is subsequently obtained from the surface potential equation and the subthreshold current expression,which takes into account the grain size and trap states.This model has a simple functional form and it can reduce to that of the conventional long channel MOSFET in the case of large grain size and low trap states.The model has been verified by a good agreement between simulated results and experimental data.关键词
多晶硅薄膜晶体管/亚阈值/准二维Key words
polysilicon thin-film transistors/subthreshold/quasi-two-dimensional分类
信息技术与安全科学引用本文复制引用
吴为敬..多晶硅薄膜晶体管亚阈值区准二维模型[J].液晶与显示,2010,25(4):523-526,4.基金项目
中央高校基本科研业务费专项资金资助(No.x2clD2104790) （No.x2clD2104790）
