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Characteristics of GaN grown on 6H-SiC with different AlN buffers

Ding Guojian Guo Liwei Xing Zhigang Chen Yao Xu Peiqiang Jia Haiqiang Zhou Junming Chen Hong

半导体学报2010，Vol.31Issue(3)：33-37,5.

半导体学报2010，Vol.31Issue(3)：33-37,5.DOI:10.1088/1674-4926/31/3/033003

Characteristics of GaN grown on 6H-SiC with different AlN buffers

Ding Guojian ¹Guo Liwei ¹Xing Zhigang ¹Chen Yao ¹Xu Peiqiang ¹Jia Haiqiang ¹Zhou Junming ¹Chen Hong¹

作者信息

1. Beifing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
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摘要

关键词

GaN/AlN/XRD/MOCVD

Key words

GaN/AlN/XRD/MOCVD

引用本文复制引用

Ding Guojian,Guo Liwei,Xing Zhigang,Chen Yao,Xu Peiqiang,Jia Haiqiang,Zhou Junming,Chen Hong..Characteristics of GaN grown on 6H-SiC with different AlN buffers[J].半导体学报,2010,31(3):33-37,5.

基金项目

Project supported by the National Natural Science Foundation of China (No. 10574148), the National High-Tech Research and Development Program of China (Nos. 2006AA03A106, 2006AA03A 107), and the State Key Development Program for Basic Research of China (No.2006CB921300). （No. 10574148）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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