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Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

Li Yongliang Xu Qiuxia

半导体学报2010，Vol.31Issue(3)：107-111,5.

半导体学报2010，Vol.31Issue(3)：107-111,5.DOI:10.1088/1674-4926/31/3/036001

Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

Li Yongliang ¹Xu Qiuxia¹

作者信息

1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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摘要

关键词

HfSiON/high-k/wet etching/interracial layer

Key words

HfSiON/high-k/wet etching/interracial layer

引用本文复制引用

Li Yongliang,Xu Qiuxia..Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions[J].半导体学报,2010,31(3):107-111,5.

基金项目

Project supported by the Special Funds for Major State Basic Research Projects (No. 2006CB302704) and the National Natural Science Foundation of China (No. 60776030). （No. 2006CB302704）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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