电子科技大学学报2011，Vol.40Issue(1)：134-137,4.DOI:10.3969/j.issn.1001-0548.2011.01.025
Si衬底上3C-SiC异质外延应力的消除
Strain Reducing in 3C-SiC Film Growth on Si Substrate
摘要
Abstract
Heteroepitaxial growth of 3C-SiC on n-Si substrates has been performed by low pressure chemical vapor deposition process. The effects of different carbonized conditions and growth conditions on 3C-SiC fills are investigated by optical profilometry and X-ray diffraction. The mechanism to reduce the 3C-SiC/Si wafter strain is discussed. The results show that the curvature of the wafer is reduced when the crystalline quality is improved. This can be interpreted that the crystalline quality improvement increases the intrinsic mismatch strain εm and compensates for the thermoelastic strain εθ, leading to the reduction of the residual strain. The best process condition is: carbonized temperature 1 000 ℃, carbonized time 5min, growth temperature 1 200 ℃, and growth rate 4 μm/h. High quality SiC epilayer has been obtained under the above condition and the epilayer curvature of the epilayer is only 5 μm/45 mm. The full-width at half maximum of the SiC(111) peak is 0.15°. The surface roughness is 15.4 nm.关键词
3C-SiC/碳化/异质外延/生长/Si衬底Key words
3C-SiC/ carbonized/ eteroepitaxial/ growth/ Si substrate分类
数理科学引用本文复制引用
陈达,张玉明,张义门,王悦湖..Si衬底上3C-SiC异质外延应力的消除[J].电子科技大学学报,2011,40(1):134-137,4.基金项目
国家自然科学基金(60876061) （60876061）
部级预研基金 （）
陕西13115创新工程(2008ZDKG-30) （2008ZDKG-30）
