人工晶体学报2011，Vol.40Issue(1)：70-74,5.
外延生长四方相Pb(Zr0.65Ti0.35)O3薄膜
Epitaxial Growth of Tetragonal Pb( Zr0.65Ti0.35 )O3 Thin Films
摘要
Abstract
Pb( Zr0.65Ti0.35 )O3 (PZT) thin films were deposited on LaAlO3 (LAO) substrates with SrRuO3 (SRO) template layers by RF sputtering method.X-ray diffraction analysis showed that the PZT thin films have the epitaxial orientation relationship of (001)[010]PZT ‖ (001)[010]SRO ‖ (001)[010]LAO with the substrates.Transmission electron microscopy observations revealed that the PZT thin films exhibited tetragonal phase, which was attributed to the clamping effect of the substrates.The clamping effect on the electrical properties, especially on the dielectric properties, has been evaluated.Ferroelectric measurements showed that PZT films with LAO/SRO substrates were fatigue free.However, the test of dielectric property dependences on temperature indicated that the Curie temperature of PZT films shifted to low value and the loss tangent decreased with increase of temperature.Owing to the release of clamping-stress, the loss tangent decreased dramatically while the temperature was approaching the phase transition temperature of PZT thin films.关键词
外延生长/Pb(Zr0.65Ti0.35)O3薄膜/射频磁控溅射/漏电流/损耗Key words
epitaxial growth/ Pb(Zr0.65Ti0.35)O3 thin films/ RF sputtering method/ leakage current/ loss分类
信息技术与安全科学引用本文复制引用
刘敬松,李惠琴,曹林洪,徐光亮..外延生长四方相Pb(Zr0.65Ti0.35)O3薄膜[J].人工晶体学报,2011,40(1):70-74,5.基金项目
国家高技术研究发展计划(863)(2009AA035002) （863）
四川省教育厅青年基金项目(09ZB095) （09ZB095）
