人工晶体学报2011，Vol.40Issue(1)：114-118,5.
铝层厚度对铝诱导非晶硅薄膜晶化过程的影响
Effect of Aluminum Layer Thickness on Crystallization Process of Aluminum Induced Amorphous Silicon Films
摘要
Abstract
Based on aluminum-induced solid-phase crystallization of amorphous silicon thin fdm method, the period structure of Al/Si…Al/Si/glass films were prepared by DC magnetron sputter ion plating technique.The Al/Si multilayer films were annealed at 500 ℃ in vacuum annealing furnace and cross-section phtotopography of the films before and after annealing were analyzed by TEM, and the essential influence of aluminum layer thickness on crystallization process of aluminum induced amorphous silicon films was discussed combine with diffusion process.The results show that: Al, Si atoms take inter-diffusion movement along the Al/Si interface layer and the global zone reached the critical concentration C8 in Si layer likes a line parallel to the Al/Si interface and gradually increases to the aluminum atoms in the direction of promoting the diffusion distance during the AIC process by annealing.The critical concentration of Csin the region as a whole moved forward faster and the number of initial silicon nucleation is larger with increasing the thickness of Al layer.Although the results of aluminum-induced crystallization of silicon films are all polycrystalline, the number of growing crystal planes is increased and the size of silicon grains is reduced simultaneity.关键词
铝层厚度/非晶硅薄膜/晶化过程/扩散Key words
aluminum layer thickness/ amorphous silicon films/ crystallization process/ diffusion分类
通用工业技术引用本文复制引用
梁戈,郭烈萍,李洪涛,蒋百灵,焦栋茂..铝层厚度对铝诱导非晶硅薄膜晶化过程的影响[J].人工晶体学报,2011,40(1):114-118,5.基金项目
陕西省教育厅科学技术研究计划(09JK623)资助项目 （09JK623）
