武汉工程大学学报2011，Vol.33Issue(1)：54-57,61,5.DOI:10.3969/j.issn.1674-2869.2011.01.014
MPCVD法AlN基体上金刚石薄膜的制备
Preparation of diamond film on AlN substrate by MPCVD
湛玉龙 1付秋明 1马志斌1
作者信息
- 1. 武汉工程大学材料科学与工程学院,武汉工程大学湖北省等离子体化学与新材料重点实验室,湖北,武汉,430074
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摘要
Abstract
Diamond film was grown on AIN surface using acetone and hydrogen mixture in microwave plasma chemical vapor deposition (MPCVD).The diamond film samples were investigated by Raman spectroscopy analysis (Raman) and Scanning electron microscopy (SEM).The results showed that the continuous diamond film was very difficult to be directly deposited on AIN surface due to low diamond nucleation density.After the diamond nucleation density was improved by using diamond fine powder to grind the AIN surface, the getting diamond film contained non-diamond phase and defects, had no clearly facet features, and was stacked by big size ball-like particles from Raman analysis and SEM observation.关键词
AlN/金刚石薄膜/丙酮/MPCVD分类
数理科学引用本文复制引用
湛玉龙,付秋明,马志斌..MPCVD法AlN基体上金刚石薄膜的制备 [J].武汉工程大学学报,2011,33(1):54-57,61,5.
