中国粉体技术2011，Vol.17Issue(1)：52-54,58,4.DOI:10.3969/j.issn.1008-5548.2011.01.015
碳化硅粒径分布对单晶硅线切割的影响
Effect of Size Distribution of SiC Particles on Silicon Crystals Wire Sawing Process
孙守振 1王林勇 1奚西峰1
作者信息
- 1. 西安交通大学能源与动力工程学院,陕西,西安,710049
- 折叠
摘要
Abstract
The influence of different size distribution of SiC particles on the wafer surface damage was investigated by means of the technique of laser particle analyzer and scanning electron microscope (SEM). The analysis by actually cutting process indicated that the silicon wafer surface damage primarily resulted from side-to-side vibrations, which was caused by partial different size distribution of particles cutting block. The experiments showed that the distributions concentrated of SiC granularity made fewer surface rough and damage thickness in silicon wafers.关键词
磨料/碳化硅/粒径分布/线切割分类
通用工业技术引用本文复制引用
孙守振,王林勇,奚西峰..碳化硅粒径分布对单晶硅线切割的影响[J].中国粉体技术,2011,17(1):52-54,58,4.
