硅酸盐学报2011，Vol.39Issue(3)：447-451,5.
反应烧结氮化硅-碳化硅复合材料的氮化机理
Nitridation Mechanism of Reaction Sintered Si3N4-SiC Composite
摘要
Abstract
In order to investigate the reason of uneven microstructure and non-uniform distribution of Si3N4 in Si3N4-SiC materials,both microstructure and thermodynamics of Si3N4-SiC composite materials were analyzed, which were prepared by nitriding reaction sintering in flame-isolation nitridation shuttle kiln. The results show that Si3N4 exists in fibrous state and column state. Nitridation mechanism of silicon is as follows: silicon is oxidized to form gaseous SiO firstly, oxygen partial pressure is reduced in the system,silicon reacts with nitrogen directly to form column Si3N4 while the system oxygen partial pressure is low enough. SiO reacts with nitrogen to form Si3N4 also, which is a gas-gas reaction, so the fibrous Si3N4 is formed. Gaseous SiO mainly distributes in pores and surfaces before nitridation, and thus it causes the non-uniform distribution of Si3N4 and uneven microstructure of reaction-sintered Si3N4-SiC materials.关键词
反应烧结/氮化硅/碳化硅/氮化反应机理/直接氮化/一氧化硅氮化Key words
reaction sintering/ silicon nitride/ silicon carbide/ nitridation mechanism/ direct nitridation/ silicon monoxide nitridation分类
化学化工引用本文复制引用
李勇,朱晓燕,王佳平,陈俊红,薛文东,孙加林..反应烧结氮化硅-碳化硅复合材料的氮化机理[J].硅酸盐学报,2011,39(3):447-451,5.基金项目
北京市教育委员会共建专项资助. （）
