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A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices

Zhu Peng Pan Liyang Gu Haiming Qiao Fengying Deng Ning Xu Jun

半导体学报2010，Vol.31Issue(10)：52-56,5.

半导体学报2010，Vol.31Issue(10)：52-56,5.DOI:10.1088/1674-4926/31/10/104008

A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices

Zhu Peng ¹Pan Liyang ¹Gu Haiming ²Qiao Fengying ¹Deng Ning ¹Xu Jun¹

作者信息

1. Institute of Microelectronics, Tsinghua University, Beijing 100084, China
2. Tsinghua National Laboratory for Information Science and Technology, Beijing 100084, China
折叠

摘要

关键词

charge pumping/trapped charge distribution/localized VT

Key words

charge pumping/trapped charge distribution/localized VT

引用本文复制引用

Zhu Peng,Pan Liyang,Gu Haiming,Qiao Fengying,Deng Ning,Xu Jun..A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices[J].半导体学报,2010,31(10):52-56,5.

基金项目

Project supported by the National Basic Research Program of China (No. 2006CB302700), the National Natural Science Foundation of China (No. 60876076), and the National Key Scientific and Technological Project of China (No. 2009ZX02023-5-3). （No. 2006CB302700）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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