首页|期刊导航|半导体学报|Surface reconstructions and reflection high-energy electron diffraction intensity oscillations during homoepitaxial growth on nonmisoriented GaAs(111)B by MBE

Surface reconstructions and reflection high-energy electron diffraction intensity oscillations during homoepitaxial growth on nonmisoriented GaAs(111)B by MBE

Yang Ruixia Wu Yibin Niu Chenliang Yang Fan

半导体学报2010，Vol.31Issue(11)：1-4,4.

半导体学报2010，Vol.31Issue(11)：1-4,4.DOI:10.1088/1674-4926/31/11/113001

Surface reconstructions and reflection high-energy electron diffraction intensity oscillations during homoepitaxial growth on nonmisoriented GaAs(111)B by MBE

Yang Ruixia ¹Wu Yibin ²Niu Chenliang ¹Yang Fan¹

作者信息

1. School of Information Engineering,Hebei University of Technology,Tianjin 300130,China
2. The 13th Electronic Research Institute,CETC,Shijiazhuang 050051,China
折叠

摘要

关键词

GaAs(111)B/RHEED/surface reconstruction/epilayer

Key words

GaAs(111)B/RHEED/surface reconstruction/epilayer

引用本文复制引用

Yang Ruixia,Wu Yibin,Niu Chenliang,Yang Fan..Surface reconstructions and reflection high-energy electron diffraction intensity oscillations during homoepitaxial growth on nonmisoriented GaAs(111)B by MBE[J].半导体学报,2010,31(11):1-4,4.

基金项目

Project supported by the National Natural Science Foundation of China (No.61076004) and the Natural Science Foundation of Hebei Province, China (No. E2009000050). （No.61076004）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

访问量0

下载量0

段落导航