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Improved light extraction of wafer-bonded AIGaInP LEDs by surface roughening

Liu Zike Gao Wei Xu Chen Zou Deshu Qin Yuan Guo Jing Shen Guangdi

半导体学报2010，Vol.31Issue(11)：52-54,3.

半导体学报2010，Vol.31Issue(11)：52-54,3.DOI:10.1088/1674-4926/31/11/114011

Improved light extraction of wafer-bonded AIGaInP LEDs by surface roughening

Liu Zike ¹Gao Wei ¹Xu Chen ¹Zou Deshu ¹Qin Yuan ¹Guo Jing ¹Shen Guangdi¹

作者信息

1. Key Laboratory of Opto-Electronics Technology,Ministry of Education,Beijing University of Technology,Beijing 100124,China
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摘要

关键词

AlGaInP/light-emitting diodes/metal bonding/surface roughening

Key words

AlGaInP/light-emitting diodes/metal bonding/surface roughening

引用本文复制引用

Liu Zike,Gao Wei,Xu Chen,Zou Deshu,Qin Yuan,Guo Jing,Shen Guangdi..Improved light extraction of wafer-bonded AIGaInP LEDs by surface roughening[J].半导体学报,2010,31(11):52-54,3.

基金项目

Project supported by the Natural Science Foundation of Beijing, China (No. 4092007), the National High Technology Research and Development Program of China (No. 2008AA03Z402), the Doctoral Program Foundation of Beijing, China (No. X0002013200801), and the Eighth BJUT Technology Fund for Postgraduate Students, China. （No. 4092007）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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