半导体学报2010，Vol.31Issue(11)：127-130,4.DOI:10.1088/1674-4926/31/11/116001
Selective wet etch of a TaN metal gate with an amorphous-silicon hard mask
Selective wet etch of a TaN metal gate with an amorphous-silicon hard mask
摘要
关键词
TaN/wet etching/metal gate/high k dielectric/hardmask/integrationKey words
TaN/wet etching/metal gate/high k dielectric/hardmask/integration引用本文复制引用
Li Yongliang,Xu Qiuxia..Selective wet etch of a TaN metal gate with an amorphous-silicon hard mask[J].半导体学报,2010,31(11):127-130,4.基金项目
Project supported by the Special Funds for Major State Basic Research Project of China(No.2006CB302704)and the National Natural Science Foundation of China(No.60776030). （No.2006CB302704）
