半导体学报2010，Vol.31Issue(10)：19-23,5.DOI:10.1088/1674-4926/31/10/104001
Nanoscale strained-Si MOSFET physics and modeling approaches: a review
Nanoscale strained-Si MOSFET physics and modeling approaches: a review
Amit Chaudhry 1J. N. Roy 2Garima Joshi1
作者信息
- 1. University Institute of Engineering and Technology, Panjab University, Chandigarh 91160047, India
- 2. Solar Semiconductor Private Limited, Hyderabad 91510001, India
- 折叠
摘要
关键词
mobility/SiGe/strained-Si/technology CADKey words
mobility/SiGe/strained-Si/technology CAD引用本文复制引用
Amit Chaudhry,J. N. Roy,Garima Joshi..Nanoscale strained-Si MOSFET physics and modeling approaches: a review [J].半导体学报,2010,31(10):19-23,5.
