半导体学报2010，Vol.31Issue(9)：10-13,4.DOI:10.1088/1674-4926/31/9/093003
Epitaxial growth of ZnO on GaN/sapphire substrate by radio-frequency magnetron sputtering
Epitaxial growth of ZnO on GaN/sapphire substrate by radio-frequency magnetron sputtering
Yang Xiaoli 1Chen Nuofu 2Yin Zhigang 3Zhang Xingwang 1Li Yang 1You Jingbi 1Wang Yu 1Dong Jingjing 1Cui Min 1Gao Yun 1Huang Tianmao 1Chen Xiaofeng 1Wang Yanshuo1
作者信息
- 1. Key Laboratory of Semiconductor Material Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
- 2. School of Renewable Energy, North China Electric Power University, Beijing 102206, China
- 3. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
- 折叠
摘要
关键词
ZnO/magnetron sputtering/photoluminescence/surface morphologyKey words
ZnO/magnetron sputtering/photoluminescence/surface morphology引用本文复制引用
Yang Xiaoli,Chen Nuofu,Yin Zhigang,Zhang Xingwang,Li Yang,You Jingbi,Wang Yu,Dong Jingjing,Cui Min,Gao Yun,Huang Tianmao,Chen Xiaofeng,Wang Yanshuo..Epitaxial growth of ZnO on GaN/sapphire substrate by radio-frequency magnetron sputtering[J].半导体学报,2010,31(9):10-13,4.
