半导体学报2010，Vol.31Issue(1)：65-68,4.DOI:10.1088/1674-4926/31/1/015004
A 2.4 GHz power amplifier in 0.35 μm SiGe BiCMOS
A 2.4 GHz power amplifier in 0.35 μm SiGe BiCMOS
Hao Mingli 1Shi Yin2
作者信息
- 1. Institute of Microelectronics,Chinese Academy of Sciences,Beifing 100029,China
- 2. Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
- 折叠
摘要
关键词
2.4 GHz/PA/SiGe BiCMOS/parasiticsKey words
2.4 GHz/PA/SiGe BiCMOS/parasitics引用本文复制引用
Hao Mingli,Shi Yin..A 2.4 GHz power amplifier in 0.35 μm SiGe BiCMOS[J].半导体学报,2010,31(1):65-68,4.
