半导体学报2010，Vol.31Issue(12)：1-10,10.DOI:10.1088/1674-4926/31/12/121001
Impurity Deionization Effects on Surface Recombination DC Current-Voltage Characteristics in MOS Transistors
Impurity Deionization Effects on Surface Recombination DC Current-Voltage Characteristics in MOS Transistors
Chen Zuhui 1Jie Binbin 2Sah Chihtang2
作者信息
- 1. Lee-Kuan-Yew Postdoctoral Fellow,2007-2010,Nanyang Technological University, Singapore 639798,Singapore
- 2. Department of Physics, Xiamen University, Xiamen 361005,China
- 折叠
摘要
关键词
recombination current/impurity deionization/interface traps/MOS transistorsKey words
recombination current/impurity deionization/interface traps/MOS transistors引用本文复制引用
Chen Zuhui,Jie Binbin,Sah Chihtang..Impurity Deionization Effects on Surface Recombination DC Current-Voltage Characteristics in MOS Transistors[J].半导体学报,2010,31(12):1-10,10.
