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Temperature coefficients of grain boundary resistance variations in a ZnO/p-Si heterojunction

Liu Bingce Liu Cihui Xu Jun Yi Bo

半导体学报2010，Vol.31Issue(12)：11-15,5.

半导体学报2010，Vol.31Issue(12)：11-15,5.DOI:10.1088/1674-4926/31/12/122001

Temperature coefficients of grain boundary resistance variations in a ZnO/p-Si heterojunction

Liu Bingce ¹Liu Cihui ¹Xu Jun ¹Yi Bo¹

作者信息

1. Department of Physics, University of Science and Technology of China, Hefei 230026,China
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摘要

关键词

ZnO/p-Si heterojunction/grain boundary/temperature coefficients of grain boundary resistances/intrinsic defects

Key words

ZnO/p-Si heterojunction/grain boundary/temperature coefficients of grain boundary resistances/intrinsic defects

引用本文复制引用

Liu Bingce,Liu Cihui,Xu Jun,Yi Bo..Temperature coefficients of grain boundary resistance variations in a ZnO/p-Si heterojunction[J].半导体学报,2010,31(12):11-15,5.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.50472009,10474091,50532070). （Nos.50472009,10474091,50532070）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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