半导体学报2010，Vol.31Issue(12)：28-32,5.DOI:10.1088/1674-4926/31/12/124002
Comparison of electron transmittances and tunneling currents in an anisotropic TiNx/HfO2/SiO2/p-Si(100)metal-oxide-semiconductor(MOS)capacitor calculated using exponential-and Airy-wavefunction approaches and a transfer matrix method
Comparison of electron transmittances and tunneling currents in an anisotropic TiNx/HfO2/SiO2/p-Si(100)metal-oxide-semiconductor(MOS)capacitor calculated using exponential-and Airy-wavefunction approaches and a transfer matrix method
Fatimah A.Noor 1Mikrajuddin Abdullah 1Sukirno 1Khairurrijal1
作者信息
- 1. Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung,Jalan Ganesa 10,Bandung 40132,Indonesia
- 折叠
摘要
关键词
Airy wavefunction/anisotropic MOS/exponential wavefunction/transfer matrix method/transmittance/tunneling currentKey words
Airy wavefunction/anisotropic MOS/exponential wavefunction/transfer matrix method/transmittance/tunneling current引用本文复制引用
Fatimah A.Noor,Mikrajuddin Abdullah,Sukirno,Khairurrijal..Comparison of electron transmittances and tunneling currents in an anisotropic TiNx/HfO2/SiO2/p-Si(100)metal-oxide-semiconductor(MOS)capacitor calculated using exponential-and Airy-wavefunction approaches and a transfer matrix method[J].半导体学报,2010,31(12):28-32,5.
