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Hot-carrier-induced on-resistance degradation of step gate oxide NLDMOS

Han Yan Zhang Bin Ding Koubao Zhang Shifeng Han Chenggong Hu Jiaxian Zhu Dazhong

半导体学报2010，Vol.31Issue(12)：49-53,5.

半导体学报2010，Vol.31Issue(12)：49-53,5.DOI:10.1088/1674-4926/31/12/124006

Hot-carrier-induced on-resistance degradation of step gate oxide NLDMOS

Han Yan ¹Zhang Bin ¹Ding Koubao ¹Zhang Shifeng ¹Han Chenggong ¹Hu Jiaxian ¹Zhu Dazhong¹

作者信息

1. Institute of Microelectronics & Photoelectronics, Zhejiang University, Hangzhou 310027,China
折叠

摘要

关键词

SG-NLDMOS/Ron degradation/charge-pumping/interface state/positive oxide-trapped charge

Key words

SG-NLDMOS/Ron degradation/charge-pumping/interface state/positive oxide-trapped charge

引用本文复制引用

Han Yan,Zhang Bin,Ding Koubao,Zhang Shifeng,Han Chenggong,Hu Jiaxian,Zhu Dazhong..Hot-carrier-induced on-resistance degradation of step gate oxide NLDMOS[J].半导体学报,2010,31(12):49-53,5.

基金项目

Project supported by the National Science &Technology Major Project of China (No.2009ZX01033-001-003). （No.2009ZX01033-001-003）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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