半导体学报2010，Vol.31Issue(12)：62-65,4.DOI:10.1088/1674-4926/31/12/124009
Process optimization of a deep trench isolation structure for high voltage SOI devices
Process optimization of a deep trench isolation structure for high voltage SOI devices
Zhu Kuiying 1Qian Qinsong 1Zhu Jing 1Sun Weifeng1
作者信息
- 1. National ASIC System Engineering Research Center, Southeast University, Nanjing 210096,China
- 折叠
摘要
关键词
deep trench isolation/SOI/weak point/process optimizationKey words
deep trench isolation/SOI/weak point/process optimization引用本文复制引用
Zhu Kuiying,Qian Qinsong,Zhu Jing,Sun Weifeng..Process optimization of a deep trench isolation structure for high voltage SOI devices[J].半导体学报,2010,31(12):62-65,4.
