硅酸盐学报2011，Vol.39Issue(2)：306-311,6.
衬底温度对Al2O3(0001)表面外延6H-SiC薄膜的影响
Effect of Substrate Temperature on the Growth of 6H-SiC Thin Films on Al2O3 (0001) Surface
摘要
Abstract
6H-SiC thin films were prepared on α-Al2O3 (0001) substrate at different substrate temperatures by solid-source molecular beam epitaxy. The microstructure and crystalline quality of the SiC thin films were characterized by reflection high energy electron diffraction, X-ray diffraction and atomic force microscopy. The results show that the 6H-SiC film with better crystalline quality is obtained at the substrate temperature of 1 100 ℃, while the films with poorer crystalline quality are obtained at both lower substrate temperature (1 000 ℃) and higher substrate temperature (1 200 ℃). There is tensile strain in the plane of the film grown at the substrate temperature of 1 000 ℃. As the substrate temperature increases, the stress changes to be compressive. There are few stresses on the film grown at the substrate temperature of 1 100 ℃. These stresses are probably induced by the mismatch of both the lattice constant and the coefficient of thermal expansion of the film and substrate.关键词
碳化硅薄膜/蓝宝石衬底/固源分子束外延Key words
silicon carbide film/ sapphire substrate/ solid-source molecular beam epitaxy分类
数理科学引用本文复制引用
刘忠良,康朝阳,唐军,徐彭寿..衬底温度对Al2O3(0001)表面外延6H-SiC薄膜的影响[J].硅酸盐学报,2011,39(2):306-311,6.基金项目
安徽省自然科学基金(11040606M64) （11040606M64）
国家自然科学基金(50872128) （50872128）
安徽省高等学校省级自然科学研究(KJ2010B189)资助项目. （KJ2010B189）
