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热处理工艺对超声电沉积制备CuInSe2薄膜的影响

邹正光 聂小明 龙飞 陈壁滔

人工晶体学报2011,Vol.40Issue(1):119-123,5.
人工晶体学报2011,Vol.40Issue(1):119-123,5.

热处理工艺对超声电沉积制备CuInSe2薄膜的影响

Influences of Heat Treatment on CulnSe2 Films Prepared by Ultrasounic Electrodeposition

邹正光 1聂小明 1龙飞 1陈壁滔1

作者信息

  • 1. 桂林理工大学有色金属材料及其加工新技术教育部重点实验室,桂林,541004
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摘要

Abstract

CulnSe2 (CIS) precursor films were produced on Mo substrate using one-step electrodeposition (ED) technique with ultrasound in three-electrode potentiostatic device, the chalcopyrite structure CIS films were formed by annealing CulnSe2 precursor. The influences of heating temperature, holding time and heating rate on films'composition, phase and morphology were studied. The results indicates that the films show a better phase purity, crystallinity and a larger grain size as the heating temperature, holding time increasing and the heating rate decreasing. Thin film surface is not smooth and uniform when the heat treatment temperature is too high, too fast or the holding time is too long.

关键词

CuInSe2/超声电沉积/热处理温度/保温时间/升温速率

Key words

CuInSe2/ ultrasonic electro-deposition/ heating temperature/ holding time/ heating rate

分类

化学化工

引用本文复制引用

邹正光,聂小明,龙飞,陈壁滔..热处理工艺对超声电沉积制备CuInSe2薄膜的影响[J].人工晶体学报,2011,40(1):119-123,5.

基金项目

国家科技部科技人员服务企业行动项目(2009GJE10009) (2009GJE10009)

国家自然科学基金(50902024)资助项目 (50902024)

广西科学研究与技术开发计划(桂科攻0895002-3) (桂科攻0895002-3)

人工晶体学报

OA北大核心CSCDCSTPCD

1000-985X

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