首页|期刊导航|半导体学报|Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

Wen Feng Liu Deming Huang Lirong

半导体学报2010，Vol.31Issue(10)：43-46,4.

半导体学报2010，Vol.31Issue(10)：43-46,4.DOI:10.1088/1674-4926/31/10/104006

Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

Wen Feng ¹Liu Deming ¹Huang Lirong¹

作者信息

1. Wuhan National Laboratory for Optoelectronics, College of Opto-Electronics Science & Engineering,Huazhong University of Science & Technology, Wuhan 430074, China
折叠

摘要

关键词

photonic crystal/light emitting diode/finite-difference time-domain modeling

Key words

photonic crystal/light emitting diode/finite-difference time-domain modeling

引用本文复制引用

Wen Feng,Liu Deming,Huang Lirong..Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal[J].半导体学报,2010,31(10):43-46,4.

基金项目

Project supported by the National Natural Science Foundation of China (No. 60777019). （No. 60777019）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

访问量4

下载量0

段落导航