半导体学报2010，Vol.31Issue(12)：57-61,5.DOI:10.1088/1674-4926/31/12/124008
An improved analytical model for the electric field distribution in an RF-LDMOST structure
An improved analytical model for the electric field distribution in an RF-LDMOST structure
Jiang Yibo 1Wang Shuai 1Li Ke 1Chen Lei 1Du Huan1
作者信息
- 1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029,China
- 折叠
摘要
关键词
RF-LDMOST/analytical model/thickness of p epitaxial layerKey words
RF-LDMOST/analytical model/thickness of p epitaxial layer引用本文复制引用
Jiang Yibo,Wang Shuai,Li Ke,Chen Lei,Du Huan..An improved analytical model for the electric field distribution in an RF-LDMOST structure[J].半导体学报,2010,31(12):57-61,5.
