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Grain boundary layer behavior in ZnO/Si heterostructure

Liu Bingce Liu Cihui Yi Bo

半导体学报2010，Vol.31Issue(3)：15-18,4.

半导体学报2010，Vol.31Issue(3)：15-18,4.DOI:10.1088/1674-4926/31/3/032003

Liu Bingce ¹Liu Cihui ¹Yi Bo¹

作者信息

1. Department of Physics, University of Science and Technology of China, Hefei 230026, China
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ZnO/Si heterostructure/grain boundary layer/ntrinsic defects/deep level

ZnO/Si heterostructure/grain boundary layer/ntrinsic defects/deep level

Liu Bingce,Liu Cihui,Yi Bo..Grain boundary layer behavior in ZnO/Si heterostructure[J].半导体学报,2010,31(3):15-18,4.

Project supported by the National Natural Science Foundation of China (Nos. 50472009, 10474091, 50532070). （Nos. 50472009, 10474091, 50532070）

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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