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Phonon-induced magnetoresistance oscillations in a high-mobility quantum well

Zhou Qisheng Cao Juncheng Qi Ming Lei Xiaolin

半导体学报2010，Vol.31Issue(9)：1-4,4.

半导体学报2010，Vol.31Issue(9)：1-4,4.DOI:10.1088/1674-4926/31/9/092001

Phonon-induced magnetoresistance oscillations in a high-mobility quantum well

Zhou Qisheng ¹Cao Juncheng ¹Qi Ming ¹Lei Xiaolin²

作者信息

1. State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
2. Department of Physics,Shanghai Jiao Tong University,Shanghai 200030,China
折叠

摘要

关键词

two-dimensional electron gas/phonon-induced magnetoresistance oscillations/linear mobility/optimal temperature

Key words

two-dimensional electron gas/phonon-induced magnetoresistance oscillations/linear mobility/optimal temperature

引用本文复制引用

Zhou Qisheng,Cao Juncheng,Qi Ming,Lei Xiaolin..Phonon-induced magnetoresistance oscillations in a high-mobility quantum well[J].半导体学报,2010,31(9):1-4,4.

基金项目

Project supported by the National Basic Research Program of China (No. 2007CB310402), the National Natural Science Foundation of China (No. 60721004), and the Major Projects (Nos. KGCX1-YW-24, KGCX2-YW-231) and the Hundred Scholar Plan of the Chinese Academ of Sciences. （No. 2007CB310402）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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