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Fe3O4P型掺杂对有机电致发光器件性能的提高

张丹丹 刘磊石 陈路 王海 刘式墉 冯晶

发光学报2011,Vol.32Issue(1):42-46,5.
发光学报2011,Vol.32Issue(1):42-46,5.DOI:10.3788/fgxb20113201.0042

Fe3O4P型掺杂对有机电致发光器件性能的提高

Improvement of The Performances of Organic Light-emitting Devices Using Fe304 as p-dopant

张丹丹 1刘磊石 2陈路 1王海 1刘式墉 1冯晶1

作者信息

  • 1. 吉林大学电子科学与工程学院集成光电子学国家重点联合实验室,吉林,长春,130012
  • 2. 江阴新顺微电子有限公司,江苏,江阴,214431
  • 折叠

摘要

Abstract

This paper reports a high performances Fe304 doped organic light emitting devices (OLEDs). The tris- (8-hydroxyquinoline) aluminum ( Alq3 ) -based OLEDs with Fe3O4 doped N, N '-diphenyl - N, N'-bis ( 1,1 '-biphenyl)-4,4'-diamine (NPB) exhibit a very low turn-on voltage of 2.5 V, and a high luminance of 30 590 cd/m2 ,while the turn-on voltage is 5 V and the luminance is 1 680 cd/m2 at 10 V for the undoped one. The power efficiency is increased from 1.2 lm/W to 2.0 lm/W at the current density of 20 mA/cm2 by inserting the Fe3O4-doped NPB layer. The Fe304 doping effects on the OLEDs are further clarified by analyzing the results of ultraviolet/visible/near-infrared absorption spectra and the characteristics on the hole-only devices. The improvements in device performances are attributed to the improved hole transport and conductivity through the formation of the charge transfer complex between Fe3O4 and NPB. Results on the UV photoelectron spectroscopy studies reveal that the hole-injection barrier from ITO to NPB is reduced by 0.37 eV by introducing the doped layer NPB: Fe304. This enhances the hole injection and decreases the driving voltage,resulting a higher power efficiency. Therefore, the power consumption is lowered, and that good for prolonging the lifetime.

关键词

有机电致发光器件/Fe3O4/P型掺杂

Key words

organic light-emitting devices/ Fe3O4/ p-dopant

分类

信息技术与安全科学

引用本文复制引用

张丹丹,刘磊石,陈路,王海,刘式墉,冯晶..Fe3O4P型掺杂对有机电致发光器件性能的提高[J].发光学报,2011,32(1):42-46,5.

基金项目

国家自然科学基金面上项目(60877019)资助 (60877019)

发光学报

OA北大核心CSCDCSTPCD

1000-7032

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