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Effect of trapped charge accumulation on the retention of charge trapping memory

Jin Rui Liu Xiaoyan Du Gang Kang Jinfeng Han Ruqi

半导体学报2010，Vol.31Issue(12)：90-93,4.

半导体学报2010，Vol.31Issue(12)：90-93,4.DOI:10.1088/1674-4926/31/12/124016

Effect of trapped charge accumulation on the retention of charge trapping memory

Jin Rui ¹Liu Xiaoyan ¹Du Gang ¹Kang Jinfeng ¹Han Ruqi¹

作者信息

1. Institute of Microelectronics, Peking University, Beijing, 100871,China
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摘要

关键词

charge accumulation/charge trapping memory/retention characteristic

Key words

charge accumulation/charge trapping memory/retention characteristic

引用本文复制引用

Jin Rui,Liu Xiaoyan,Du Gang,Kang Jinfeng,Han Ruqi..Effect of trapped charge accumulation on the retention of charge trapping memory[J].半导体学报,2010,31(12):90-93,4.

基金项目

Project supported by Samsung Electronics Co. Ltd.(Nos.20060001050,2006CB302705). （Nos.20060001050,2006CB302705）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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