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Novel multi-bit non-uniform channel charge trapping memory device with virtual-source NAND flash array

Gu Haiming Pan Liyang Zhu Peng Wu Dong Zhang Zhigang Xu Jun

半导体学报2010，Vol.31Issue(10)：57-61,5.
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半导体学报2010，Vol.31Issue(10)：57-61,5.DOI:10.1088/1674-4926/31/10/104009

Novel multi-bit non-uniform channel charge trapping memory device with virtual-source NAND flash array

Novel multi-bit non-uniform channel charge trapping memory device with virtual-source NAND flash array

Gu Haiming 1Pan Liyang 1Zhu Peng 1Wu Dong 1Zhang Zhigang 1Xu Jun1

作者信息

  • 1. Institute of Microelectronics, Tsinghua University, Beijing 100084, China
  • 折叠

摘要

关键词

multi-bit storage/non-uniform channel/charge trapping memory/NAND array/SiON layer

Key words

multi-bit storage/non-uniform channel/charge trapping memory/NAND array/SiON layer

引用本文复制引用

Gu Haiming,Pan Liyang,Zhu Peng,Wu Dong,Zhang Zhigang,Xu Jun..Novel multi-bit non-uniform channel charge trapping memory device with virtual-source NAND flash array[J].半导体学报,2010,31(10):57-61,5.

基金项目

Project supported by the National Basic Research Program of China (No. 2006CB302700). （No. 2006CB302700）

半导体学报

OA北大核心CSCDCSTPCDEI

1674-4926

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