材料科学与工程学报2011，Vol.29Issue(3)：331-336,326,7.
中频孪生靶非平衡磁控溅射制备氮化硅薄膜及其性能
Composition and Properties of Silicon Nitride Thin Films Deposited by Mid-frequency Dual-target Unbalanced Magnetron Sputtering
摘要
Abstract
Silicon nitride thin films have been deposited onto the silicon (001) substrate by a midfrequency dual-target unbalanced magnetron sputtering with two pure Si targets using different gas (Ar, N2) mixtures at fixed other conditions. The microstructure, morphology, thickness and refractive index of silicon nitride thin films were investigated by Fourier transform infrared spectroscopy (FTIR), X-ray diffractometry (XRD), atomic force microscopy (AFM) and ellipse-polarize spectrophotometry. FTIR spectra of the films reveal that the main absorption band of the Si-N bond shifts to higher wavenumbers with decreasing nitrogen mass flow ratio. All the films are amorphous silicon nitride. The surface morphology, refractive index and deposition rate are found to depend distinctively upon the different nitrogen mass flow ratios. The hardness and Young’s modulus of the films approach approximately 22 and 220GPa, respectively.关键词
氮化硅薄膜/折射率/磁控溅射/红外光谱Key words
silicon nitride/ refractive index/ magnetron sputtering/ FTIR分类
数理科学引用本文复制引用
王春,牟宗信,刘冰冰,臧海荣,牟晓东..中频孪生靶非平衡磁控溅射制备氮化硅薄膜及其性能[J].材料科学与工程学报,2011,29(3):331-336,326,7.基金项目
Project 50407015 supported by National Natural Science Foundation of China and Project Supported by Scientific Research Fund of Liaoning Provincial Education Department. （）
