东南大学学报（自然科学版）2011，Vol.41Issue(3)：518-521,4.DOI:10.3969/j.issn.1001-0505.2011.03.017
深亚微米工艺EEPROM单元加固设计及辐照性能
EEPROM cell hardness design and radiation characteristics in deep submicron process
摘要
Abstract
The general EEPROM (electrically erasable programmable read-only memory) cell is affected by radiation effect when used in space, which leads to reduction of the cell's reliability and life. Therefore, a new EEPROM cell is designed in 0. 18 μm process, which uses annular gate and field oxide isolated transistor for radiation hardness. After reinforcement, the area of cell is 9.56 μm2, and the ability of total ionizing dose effect resistance is above 1 500 Gy. These characteristics of anti-radiation are better than those of the general cell. Based on the degeneration of threshold voltage in radiation condition, the radiation effects of cell are analyzed and compared with the general cell for determining the failure mechanism. The results show that the electricity leakages of source/drain in the parasitic edge transistor and under field oxide caused by the total ionizing dose effect are the main failure mechanisms of EEPROM in the deep submicron process.The radiation hardness designs against these failure mechanisms enhance the ability of anti-radiation and reliability of the cell. This work provides a good basis for meeting the need of memory in space application.关键词
总剂量效应/EEPROM/抗辐照加固Key words
total ionizing does effect/ EEPROM (electrically erasable programmable read-only memory)/ radiation hardness分类
信息技术与安全科学引用本文复制引用
周昕杰,李蕾蕾,徐睿,于宗光..深亚微米工艺EEPROM单元加固设计及辐照性能[J].东南大学学报（自然科学版）,2011,41(3):518-521,4.基金项目
国家科技重大专项资助项目(2008ZX01XXX). （2008ZX01XXX）
