东南大学学报（自然科学版）2011，Vol.41Issue(3)：522-525,4.DOI:10.3969/j.issn.1001-0505.2011.03.018
pLEDMOS导通电阻及阈值电压的热载流子退化
On-resistance and threshold voltage hot-carrier degradation of pLEDMOS
摘要
Abstract
The influence of the different length of the drift region and the field plate upon hot-carrierInduced on-resistance (Ron) and threshold voltage ( Vth ) degradation in p-type lateral extended drain MOS (pLEDMOS) transistor with thick gate oxide has been investigated. It is concluded that increasing the length of drift region can reduce the Ron degradation but enhance the Vth degradation. However, increasing the length of field plate can reduce the degradation of both Ron and Vth. The impact ionization rate and perpendicular electronic field of pLEDMOS with the different length of the drift region and the field plate were simulated based on TCAD, the results of which can explain the mechanism of the degradation of pLEDMOS. It is also shown that the optimization of the impact ionization rate and perpendicular electronic field is an effective way to reduce the degradation of pLEDMOS.关键词
pLEDMOS/热载流子注入/导通电阻/阈值电压/退化Key words
p-type lateral extended drain MOS/ hot-carrier-injection/ on-resistance/ threshold voltage/ degradation分类
资源环境引用本文复制引用
郑维山,孙虎,刘斯扬,孙伟锋..pLEDMOS导通电阻及阈值电压的热载流子退化[J].东南大学学报（自然科学版）,2011,41(3):522-525,4.基金项目
国家高技术研究发展计划(863计划)资助项目(2008AA01Z135)、国家自然科学基金资助项目(60876017,61006018)、江苏省科技支撑计划资助项目(BE2009143). （863计划）
