计算机与数字工程2011，Vol.39Issue(5)：10-12,32,4.
非对称结构相变存储单元的三维模拟与分析
Three Dimensional Simulation and Analysis of Phase Change Random Access Memory Cell with an Asymmetric Structure
摘要
Abstract
This paper proposes a novel asymmetric structure of PCRAM cell, and then conducts three dimensional electric-thermal simulations based on FEA(Finite Element Analysis) method.The simulation results show that, with the same feature size, the operation current of the PCRAM cell with asymmetric structure is lower than that of the cell with conventional symmetric T-type structure.关键词
相变随机存储器/非对称结构/三维/有限元分析Key words
PCRAM/ asymmetric structure/ three dimensional/ finite element analysis分类
信息技术与安全科学引用本文复制引用
孙巾杰,缪向水,程晓敏,鄢俊兵..非对称结构相变存储单元的三维模拟与分析[J].计算机与数字工程,2011,39(5):10-12,32,4.基金项目
国家863高技术研究发展计划(编号:2009AA012113,2009AAOIA402)资助. （编号:2009AA012113,2009AAOIA402）
