空间科学学报2011，Vol.31Issue(3)：350-354,5.
临近空间大气中子诱发电子器件单粒子翻转模拟研究
Simulation Study on Single Event Upset Induced by Near Space Atmospheric Neutron in Electronic Devices
摘要
Abstract
Single Event Upset (SEU) induced by atmospheric neutron is harmful for near space craft, and is studied by numeric simulation in present paper.Static Random-Access Memory (SRAM)device which has regularly arrayed cells is selected as the simulation object.Using Rectangular Parallelepiped (RPP) Model as the basic model and extracting key parameters from SEU experiment data of heavy ions, sensitive volume model of SEU due to nuclear reactions between incident neutron and device materials is established.Simulation and research show that the secondary heavy ions resulting from the high energy neutrons can transfer approximate 4 microns.Consequently, to simulate the SEU events thoroughly, an extra volume beyond 4 microns from the sensitive volume is taken into account.Modeling and simulation are performed for HM62256 and HM628128 SRAM devices respectively with the help of GEANT 4 software package.The secondary particles in and near the sensitive volume contributing to SEU are considered.Differential spectrums of the deposited energy in the sensitive volume by the secondary particles are calculated.Eventually SEU events due to the secondary particles which deposited different energy in the sensitive volume are summed up.The results of the simulation agree well with those of ground experiments performed with 14 MeV neutrons and high energy protons.关键词
单粒子翻转/中子/敏感体积/weibull函数Key words
Single event upset/ Neutron/ Sensitive volume/ Weibull function分类
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张振力,张振龙,韩建伟,安广朋,蔡明辉,封国强,马英起..临近空间大气中子诱发电子器件单粒子翻转模拟研究[J].空间科学学报,2011,31(3):350-354,5.基金项目
中国科学院创新基金课题资助(CXJJ-09-M33) （CXJJ-09-M33）
