物理学报2011，Vol.60Issue(5)：538-544,7.
超深亚微米器件总剂量辐射效应三维数值模拟
Three-dimensional simulation of total dose effects on ultra-deep submicron devices
摘要
Abstract
The radiation-induced charge distribution in shallow-trench isolation (STI) structures is analyzed in this paper.We present a new approach for modeling total dose effect of ultra-deep submicron transistors.The results show that, when there is no radiation-induced charge in top100 nm of the trench-silicon interface, the simulation results of 0.18μm ultradeep submicron transistors show that the Ⅰ-Ⅴ sub-threshold does not produce the hump, and yield good agreement with experiments.On the aspect of the improvement on total ionizing dose, the leakage current of MOSFET with delta doping can be effectively reduced than with the uniform doping profile under lower radiation dose.ff the Halo doping is adopted in landscape orientation, the total dose of ultra-deep submicron transistors can be improved.This improvement is evident even at higher irradiation dose.关键词
总剂量/超陡倒掺杂/Halo掺杂/辐射效应Key words
total dose/ delta doping/ Halo doping/ radiation effect引用本文复制引用
何宝平,丁李利,姚志斌,肖志刚,黄绍燕,王祖军..超深亚微米器件总剂量辐射效应三维数值模拟[J].物理学报,2011,60(5):538-544,7.基金项目
国家重点基础研究发展计划(973)项目(批准号:61354030101)资助的课题. （973）
