物理学报2011，Vol.60Issue(5)：545-549,5.
Ti/4H-SiC肖特基势垒二极管抗辐射特性的研究
Radition effect on Ti/4H-SiC SBD Of gamma-ray,eletrons and neutrons
摘要
Abstract
The Ti/4H-SiC Schottky barrier diodes (SBDs) were irradiated at room temperature with 60 Co gamma-ray source,1 MeV electrons and neutrons, and 0V and -30 V bias voltage were applied to the diodes during gamma-ray and electron radiation. The meaurement results show that - 30 V radiation bias voltage has no influence on the radiation effect of the diodes. After 1 Mrad(Si) gamma-ray and 1 × 1013 n/cm2 neutron radiation respectively, the Schottky barrier height of the diodes basically remain the same values. After an electron dose of 3.43 × 1014 e/cm2, Schottky barrier height of the diodes slightly decreased, which was caused by ionizing damage of high energy electron, and recovered completely after annealing at room temperture. After gamma-ray and electron radiation, the reverse current of Ti/4H-SiC SBD had no obviously degration. The on-state resistance of the diodes increased after electron and neutron radiaiton.关键词
碳化硅/肖特基/辐照/偏压Key words
silicon carbide/ Schottky barrier diode/ bias voltage/ radiation effect引用本文复制引用
张林,肖剑,邱彦章,程鸿亮..Ti/4H-SiC肖特基势垒二极管抗辐射特性的研究[J].物理学报,2011,60(5):545-549,5.基金项目
西安市科技计划项目(批准号:CXY1012)和中央高校基本科研业务费专项资金(批准号:CHD2010JC054)资助的课题. （批准号:CXY1012）
