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首页|期刊导航|半导体学报|Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface*

Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface*

Wang Liancheng Guo Enqing Liu Zhiqiang Yi Xiaoyan Wang Guohong

半导体学报2011,Vol.32Issue(2):61-64,4.
半导体学报2011,Vol.32Issue(2):61-64,4.DOI:10.1088/1674-4926/32/2/024009

Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface*

Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface*

Wang Liancheng 1Guo Enqing 1Liu Zhiqiang 1Yi Xiaoyan 1Wang Guohong1

作者信息

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摘要

Abstract

Low resistance and thermally stable n-type contacts to N-polar GaN are essentially important for vertical light emitting diodes (VLEDs). The electrical characteristics of VLEDs with n-type contacts on a roughened and flat N-polar surface have been compared. VLEDs with contacts deposited on a roughened surface exhibit lower leakage currents yet a higher operating voltage. Based on this, a new scheme by depositing metallization contacts on a selectively wet-etching roughened surface has been developed. Excellent electrical and optical characteristics have been achieved with this method. An aging test further confirmed its stability.

关键词

metallization contacts/ wet etching/ surface roughening/ polarization

Key words

metallization contacts/ wet etching/ surface roughening/ polarization

引用本文复制引用

Wang Liancheng,Guo Enqing,Liu Zhiqiang,Yi Xiaoyan,Wang Guohong..Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface*[J].半导体学报,2011,32(2):61-64,4.

基金项目

Project supported by the Knowledge Innovation Program of ISCAS (No.08S4060000). (No.08S4060000)

半导体学报

OACSCDCSTPCDEI

1674-4926

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