半导体学报2011，Vol.32Issue(2)：44-47,4.DOI:10.1088/1674-4926/32/2/024005
A novel structure in reducing the on-resistance of a VDMOS
A novel structure in reducing the on-resistance of a VDMOS
Yang Yonghui 1Tang Zhaohuan 1Zhang Zhengyuan 1Liu Yong 1Wang Zhikuan 1Tan Kaizhou 1Feng Zhicheng1
作者信息
摘要
Abstract
A novel structure of a VDMOS in reducing on-resistance is proposed. With this structure, the specific on-resistance value of thc VDMOS is reduced by 22％ of that of the traditional VDMOS structure as the breakdown voltage maintained the same value in theory, and there is only one additional mask in processing thc new structure VDMOS, which is easily fabricated With the TCAD tool, one 200 V N-channel VDMOS with the new structure is analyzed, and simulated results show that a specific on-resistance value will reduce by 23％, and the value by 33％ will be realized when the device is fabricated in three epitaxies and four buried layers. The novel structure can be widely used in the strip-gate VDMOS area.关键词
VDMOS/ on-resistance/ specific on-resistance/ breakdown voltage/ epitaxial layer resistanceKey words
VDMOS/ on-resistance/ specific on-resistance/ breakdown voltage/ epitaxial layer resistance引用本文复制引用
Yang Yonghui,Tang Zhaohuan,Zhang Zhengyuan,Liu Yong,Wang Zhikuan,Tan Kaizhou,Feng Zhicheng..A novel structure in reducing the on-resistance of a VDMOS[J].半导体学报,2011,32(2):44-47,4.
