高技术通讯2011，Vol.21Issue(1)：77-82,6.DOI:10.3772/j.issn.1002-0470.2011.01.013
超宽带SiGe HBT低噪声放大器的设计和分析
Design and analysis of an ultra-wideband SiGe HBT low noise amplifier Abstract
摘要
Abstract
A novel ultra-wideband (UWB) SiGe HBT low noise amplifier (LNA) with resistive feedback was designed. Due to absence of the inductor which occupies a large chip area, the total die area and the fabrication cost of the amplifier are reduced noticeably. In feedback loops of the novel amplifier, compound distributed resistors and a DC capacitor are used instead of a traditional single resistor. In this way, the output impedance matching of the novel LNA can be improved greatly only by adjusting the resistor that is in series with a capacitor, without sacrificing of biasing conditions. The layout area of the novel resistive feedback LNA is only 0. 144mm2. The simulation results indicate that, in the band of 3.110GHz, the novel UWB LNA achieves the low noise figure (NF) of less than 4.5dB, the gain of as high as 27dB with variation of only 1.032dB, the voltage standing wave radio of less than 1.637 and the stability factor of more than 2.3.The results are of great practical importance, because they provide a guide for the design and development of the low-cost and high performance monolithic UWB LNA.关键词
低噪声放大器(LNA)/SiGe异质结双极晶体管/超宽带(UWB)/阻抗匹配/噪声系数Key words
low noise amplifier (LNA)/ SiGe HBT/ ultra-wideband (UWB)/ resistive matching/ noise figure引用本文复制引用
沈珮,张万荣,金冬月,谢红云,黄毅文..超宽带SiGe HBT低噪声放大器的设计和分析[J].高技术通讯,2011,21(1):77-82,6.基金项目
国家自然科学基金(60776051,61006059,61006044),北京市自然科学基金(4082007)和国家公派专项研究生奖学金([2010]3006)资助项目. （60776051,61006059,61006044）
